Related Experiment Video
Updated: Aug 31, 2025

Development of Efficient OLEDs from Solution Deposition
Published on: November 4, 2022
Toward a BT.2020 green emitter through a combined multiple resonance effect and multi-lock strategy
Junyuan Liu1, Yunhui Zhu2, Taiju Tsuboi1
1MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Abstract:
Color-saturated green-emitting molecules with high Commission Internationale de L'Eclairage (CIE) y values have great potential applications for displays and imaging. Here, we linked the outer phenyl groups in multiple-resonance (MR)-type blue-emitting B (boron)-N (nitrogen) molecules through bonding and spiro-carbon bridges, resulting in rigid green emitters with thermally activated delayed fluorescence. The MR effect and multiple interlocking strategy greatly suppressed the high-frequency vibrations in the molecules, which emit green light with a full-width at half-maximum of 14 nm and a CIE y value of 0.77 in cyclohexane. These were the purest green molecules with quantum efficiency and color purity that were comparable with current best quantum dots. Doping these emitters into a traditional green-emitting phosphorescence organic light-emitting diode (OLED) endowed the device with a Broadcast Service Television 2020 color-gamut, 50% improved external quantum efficiency, and an extremely high luminescence of 5.1 × 105 cd/m2, making it the greenest and brightest OLED ever reported.
More Related Videos
Related Concept Videos
Working Principle of BJT
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
Double Resonance Techniques: Overview
Spin decoupling is usually achieved by...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
BJT Amplifiers
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Field Effect Transistor

