Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure

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Yuan Li1, Liang Xu2, Zhiyou Guo1

  • 1Institute of Semiconductor Science and Technology, South China Normal University, 55 Zhongshan Avenue, Tianhe District, Guangzhou 510631, China.

Micromachines
|August 26, 2022
PubMed

Keywords:
GaN HEMTbreakdown voltagespecific on-resistancestepped dopingtrench current-aperture vertical electron transistor (CAVET)

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