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Updated: Aug 30, 2025

Atom Probe Tomography Analysis of Exsolved Mineral Phases
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Exploration of atom probe tomography at sub-10K.

Alec C Day1, Andrew J Breen2, David A Reinhard3

  • 1The University of Sydney, Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering. Sydney, NSW 2006, Australia; Steam Instruments, Inc., Madison, WI 53703, USA.

Ultramicroscopy
|August 27, 2022
PubMed
Summary

Operating atom probe tomography instruments at sub-10 K significantly improves spatial precision, enabling detailed material analysis. This advancement enhances the resolution of lattice planes and compositional accuracy in materials like silicon and gallium nitride.

Keywords:
Atom probe tomographyCryogenic analysisMass resolving powerSpatial precision

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Area of Science:

  • Materials Science
  • Analytical Chemistry
  • Physics

Background:

  • Operating temperature critically influences atom probe tomography (APT) performance, affecting spatial precision and mass resolving power.
  • Commercial APT systems typically operate at temperatures around 25 K.
  • Lowering specimen temperature is a key parameter for enhancing APT capabilities.

Purpose of the Study:

  • To modify CAMECA LEAP® and EIKOS™ atom probe systems to achieve sub-10 K specimen temperatures.
  • To investigate the impact of sub-10 K operation on APT performance metrics.
  • To analyze various material systems under these cryogenic conditions.

Main Methods:

  • Mechanical redesign of LEAP® and EIKOS™ APT systems to enable sub-10 K operation.
  • Analysis of pure Al, pure W, doped Si, and GaN using modified APT instruments.
  • Quantitative assessment of spatial precision, mass resolving power, stoichiometry, and charge-state ratio.

Main Results:

  • Sub-10 K operation significantly improves spatial precision in APT.
  • Mass resolving power shows a minor improvement at lower temperatures.
  • Enhanced spatial precision allows for the resolution of lattice planes in doped Si.
  • Improved mass spectral analysis and reduced noise floors lead to more accurate GaN composition measurements.

Conclusions:

  • Operating APT at sub-10 K offers substantial benefits for spatial resolution and compositional accuracy.
  • This advancement is particularly valuable for analyzing semiconductors and metallurgical materials.
  • Further exploration of sub-10 K parameter space holds potential for new discoveries in materials analysis.