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Updated: Aug 30, 2025

Atom Probe Tomography Analysis of Exsolved Mineral Phases
Published on: October 25, 2019
Exploration of atom probe tomography at sub-10K
Alec C Day1, Andrew J Breen2, David A Reinhard3
1The University of Sydney, Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering. Sydney, NSW 2006, Australia; Steam Instruments, Inc., Madison, WI 53703, USA.
Operating atom probe tomography instruments at sub-10 K significantly improves spatial precision, enabling detailed material analysis. This advancement enhances the resolution of lattice planes and compositional accuracy in materials like silicon and gallium nitride.
Area of Science:
- Materials Science
- Analytical Chemistry
- Physics
Background:
- Operating temperature critically influences atom probe tomography (APT) performance, affecting spatial precision and mass resolving power.
- Commercial APT systems typically operate at temperatures around 25 K.
- Lowering specimen temperature is a key parameter for enhancing APT capabilities.
Purpose of the Study:
- To modify CAMECA LEAP® and EIKOS™ atom probe systems to achieve sub-10 K specimen temperatures.
- To investigate the impact of sub-10 K operation on APT performance metrics.
- To analyze various material systems under these cryogenic conditions.
Main Methods:
- Mechanical redesign of LEAP® and EIKOS™ APT systems to enable sub-10 K operation.
- Analysis of pure Al, pure W, doped Si, and GaN using modified APT instruments.
- Quantitative assessment of spatial precision, mass resolving power, stoichiometry, and charge-state ratio.
Main Results:
- Sub-10 K operation significantly improves spatial precision in APT.
- Mass resolving power shows a minor improvement at lower temperatures.
- Enhanced spatial precision allows for the resolution of lattice planes in doped Si.
- Improved mass spectral analysis and reduced noise floors lead to more accurate GaN composition measurements.
Conclusions:
- Operating APT at sub-10 K offers substantial benefits for spatial resolution and compositional accuracy.
- This advancement is particularly valuable for analyzing semiconductors and metallurgical materials.
- Further exploration of sub-10 K parameter space holds potential for new discoveries in materials analysis.
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