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Related Concept Videos

Carrier Transport01:21

Carrier Transport

539
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
539
Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Indirect generation involves an...
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P-N junction01:11

P-N junction

664
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.

Yudai Yamaguchi1, Yuya Kanitani1, Yoshihiro Kudo1

  • 1R&D Center, Sony Group Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan.

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Summary

Threading dislocations in InGaN/GaN quantum wells facilitate indium diffusion from the InGaN layer. This diffusion occurs along the dislocation, driven by strain relaxation.

Keywords:
DislocationInGaNatom probe tomographypipe diffusiontransmission electron microscopy

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Threading dislocations (TDs) are critical defects in InGaN/GaN heterostructures.
  • Understanding defect-mediated diffusion is crucial for optimizing optoelectronic devices.

Purpose of the Study:

  • To investigate the compositional and structural properties of TDs in InGaN/GaN.
  • To elucidate the role of TDs in indium diffusion within the quantum wells.

Main Methods:

  • Correlative Transmission Electron Microscopy (TEM) for structural analysis.
  • Atom Probe Tomography (APT) for high-resolution compositional mapping.
  • Simultaneous analysis of the same TD using both TEM and APT.

Main Results:

  • Indium atoms were observed to diffuse along the threading dislocations.
  • Indium concentration decreased with increasing distance from the InGaN layer.
  • Direct observation of indium diffusion from InGaN towards the GaN surface via TDs.

Conclusions:

  • Threading dislocations act as preferential diffusion pathways for indium.
  • Pipe diffusion mechanism, driven by strain energy relaxation, is responsible for indium migration.
  • Findings provide direct evidence for defect-assisted diffusion in III-nitride quantum wells.