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Related Concept Videos

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Super-resolution laser probing of integrated circuits using algorithmic methods.

V K Ravikumar1,2, Jiann Min Chin2, Winson Lua2

  • 1Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore.

Nature Communications
|September 2, 2022
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Summary
This summary is machine-generated.

New algorithms improve laser probing for diagnosing defects in integrated circuits (ICs). This patented method achieves sub-10nm accuracy, enabling fault isolation in advanced semiconductor devices below 10nm nodes.

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Area of Science:

  • Semiconductor device physics and testing
  • Integrated circuit (IC) defect analysis
  • Photonics and laser-based metrology

Background:

  • Laser probing is crucial for diagnosing defects in integrated circuits (ICs) during electrical stress tests.
  • Miniaturization of transistors below 20nm technology nodes causes signal crosstalk and degrades fault isolation due to limited laser focal spot accuracy.
  • Existing methods struggle with precise defect localization in densely packed advanced ICs.

Purpose of the Study:

  • To develop an advanced laser probing technique for accurate defect isolation in sub-10nm semiconductor technology nodes.
  • To overcome the limitations of optical resolution and signal crosstalk in miniaturized ICs.
  • To enable continued electrical probing of ICs without hardware modifications using sub-bandgap photon energies.

Main Methods:

  • Implementation of patented algorithms including cross-correlations and clustering.
  • Integration of previously developed combinational logic analysis for signal processing.
  • Application of enhanced laser beam positioning with accuracy better than 10nm.

Main Results:

  • Achieved beam positioning accuracy to better than 10nm.
  • Extracted electrooptic waveforms from individual transistor nodes, surpassing the optical resolution limit by approximately 18 times.
  • Successfully isolated and identified a specific fault on a defective integrated circuit device.

Conclusions:

  • The developed algorithmic approach significantly enhances fault isolation capabilities in advanced ICs.
  • This method enables continued probing of semiconductor technology nodes below 10nm without requiring hardware modifications.
  • The technique allows for precise defect diagnosis even with signal crosstalk and reduced optical resolution.