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Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions.

Victor Zatko1, Simon M-M Dubois2, Florian Godel1

  • 1Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France.

ACS Nano
|September 6, 2022
PubMed
Summary

We achieved significant spin filtering in graphene spin valves using chemical vapor deposited multilayer graphene and nickel. This method enhances spin polarization up to -98%, paving the way for efficient spintronic devices.

Keywords:
2D materialschemical vapor depositiongraphenemagnetic tunnel junctionsmagnetoresistancespin-filteringspintronics

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Graphene-based spintronic devices offer low resistance-area (RA) product.
  • Achieving high spin polarization at graphene-ferromagnet interfaces is crucial for device efficiency.

Purpose of the Study:

  • To investigate large spin-filtering effects in epitaxial graphene-based spin valves.
  • To enhance spin properties by combining chemical vapor deposited (CVD) multilayer graphene with Ni(111) ferromagnetic spin sources.

Main Methods:

  • Fabrication of nanometric spin valve junctions using a local probe indentation process.
  • Utilizing a reference Al2O3/Co spin analyzer to extract spin properties.
  • Employing ab initio calculations alongside experimental data.

Main Results:

  • Observed large negative tunnel magnetoresistance (TMR) of -160%.
  • Determined a high spin polarization for the Ni(111)/Gr interface (P_Ni/Gr) up to -98%.
  • Demonstrated preservation and stabilization of Ni(111) crystallinity and metallic state by graphene CVD growth.

Conclusions:

  • Graphene-ferromagnet systems exhibit efficient spin filtering due to band structure, hybridization, and epitaxial matching.
  • These combined effects enhance spin polarization and enable novel spintronic applications.
  • The study presents a viable method for utilizing low RA graphene interfaces in advanced spin-based devices.