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Published on: August 23, 2012
Direct growth of SnS2 nanowall photoanode for high responsivity self-powered photodetectors
Shunlan Deng1, Yi Chen1, Qi Li1
1Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Shaanxi 710119, China. xxhe@snnu.edu.cn.
Abstract:
Tin sulfide (SnS2) has attracted growing attention due to its environmental friendliness, tunable band gap and potential applications for high-sensitivity photodetectors. However, the low responsivity and slow response speed severely hinder its further applications. In this work, SnS2 nanowalls have been successfully fabricated on FTO substrates by a facile hydrothermal approach. The prepared SnS2 nanowalls were used as a photoanode material for photoelectrochemical (PEC)-type photodetectors. The SnS2 based PEC-type photodetectors exhibit excellent photocurrent density (39.06 μA cm-2), responsivity (1460 μA W-1), long-term cycling stability and self-powered behavior. The responsivity of the detector is higher than that of most reported SnS2 based PEC-type photodetectors and even some SnS2 based photoconductive photodetectors. The high responsivity and self-powered behavior enable the extended potential applications of SnS2 in PEC-type photodetectors.

