GaN-HEMT Based Very-High-Frequency AC Power Supply for Electrosurgery

Area of Science:

• Electrical Engineering
• Medical Devices

Background:

• Electrosurgery requires a very-high-frequency AC inverter (VHFI) for power delivery.
• Existing VHFI technologies may have limitations in efficiency, distortion, or response time.

Purpose of the Study:

• To propose and validate a full-bridge based VHFI for electrosurgery applications.
• To evaluate the performance of a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) based VHFI.

Main Methods:

• Design and implementation of a 300 W, 390 kHz GaN HEMT based VHFI experimental setup.
• Analysis of high-frequency output generation and high-order filter design.
• Experimental testing in pure cutting, blend cutting, and coagulation modes.

Main Results:

• Maximum total harmonic distortion (THD) below 2.5% in pure cutting mode.
• Extreme fast-responding time demonstrated in blend cutting and coagulation modes.
• Crest factor of approximately 21 in coagulation mode.

Conclusions:

• The proposed VHFI is feasible for electrosurgery.
• The GaN HEMT based VHFI effectively supports diverse load values and clinical modes.
• This VHFI technology offers high performance for modern electrosurgical devices.