High-Performance Perovskite Light-Emitting Diodes Enabled by Passivating Defect and Constructing Dual Energy-Transfer...

Quasi-2D perovskites have emerged as a promising luminescent material for perovskite light-emitting diodes (Pe-LEDs). However, efficiency and stability are still obstacles to practical application due to numerous defects and inefficient energy transfer of perovskite films. Herein, functional phenethylammonium bromine-modified CsPbBr₃ nanocrystals (PEA-CsPbBr₃ NCs) are first introduced as multifunctional additive to simultaneously improve abovementioned problems. PEA-CsPbBr₃ NCs not only serve as heteronuclear seeds and trigger growth, thus greatly reducing leakage current, but also deliver Cs⁺ and Br^- to passivate the intrinsic defects inside film. More importantly, the PEA-CsPbBr₃ construct a new carrier-transfer pathway from the small-n phase of the quasi-2D perovskite to the PEA-CsPbBr₃ , which not only accelerates the energy-transfer process but also promotes radiation recombination of carriers due to stronger quantum confinement effect. Afterward, the poly(3,4-ethylenedioxythiophene):polystyrene sulfonate/poly[9,9-dioctylfluoreneco-N-[4-(3-methylpropyl)]diphenylamine]:black phosphorus quantum dot double hole-transport layer is successfully constructed to enhance its carrier-injection and charge-transport abilities. Consequently, a champion external quantum efficiency of 25.32% and maximal brightness of 128 842 cd m^-2 are achieved, which is the record efficiency of the quasi-2D Pe-LED with pure green emission at 530 nm. Moreover, an impressive 174 min lifetime is obtained at T₅₀ , which is about five times longer than the control device.