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Updated: Aug 29, 2025

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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
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Correction: First-principles insights into hydrogen trapping in interstitial-vacancy complexes in vanadium carbide
Shuai Tang1, Lin-Xian Li1, Qing Peng2
1State Key Lab of Rolling and Automation, Northeastern University, Shenyang 110819, China. tangshuai@ral.neu.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|September 13, 2022
Summary
This correction clarifies hydrogen trapping mechanisms in vanadium carbide. It refines understanding of interstitial-vacancy complexes and their impact on material properties.
Area of Science:
- Materials Science
- Computational Chemistry
- Solid-State Physics
Context:
- Vanadium carbide (VC) is a promising material for various applications.
- Understanding hydrogen interactions is crucial for its performance and durability.
- Previous studies have explored hydrogen trapping in VC, but further clarification was needed.
Purpose:
- To correct and refine the understanding of hydrogen trapping mechanisms in interstitial-vacancy complexes within vanadium carbide.
- To provide accurate first-principles insights into the behavior of hydrogen in VC.
- To ensure the reliability of computational studies on hydrogen-material interactions.
Summary:
- This work presents a correction to the original study on hydrogen trapping in vanadium carbide.
- It specifically addresses the first-principles calculations related to interstitial-vacancy complexes.
- The correction ensures greater accuracy in describing hydrogen atom interactions and binding energies within the VC lattice.
Impact:
- Improved accuracy in predicting hydrogen behavior in vanadium carbide.
- Enhanced reliability of computational materials science for hydrogen storage and embrittlement studies.
- Foundation for further research into defect engineering and hydrogen management in transition metal carbides.
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