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Updated: Aug 28, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
The influence of contact metals on epitaxially grown molybdenum disulfide for electrical and optical device
Po-Cheng Tsai1,2, Coung-Ru Yan3, Shoou-Jinn Chang3,4
1Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan.
Abstract:
Bottom-gate transistors with mono-layer MoS2channels and polycrystalline antimonene source/drain contact electrodes deposited at 75 °C are fabricated. Significant performance enhancement of field-effect mobility 11.80 cm2V-1·s-1and >106ON/OFF ratio are observed for the device. Increasing photocurrents are also observed for the MoS2transistor under light irradiation, which is attributed to the reduced carrier recombination at the metal/2D material interfaces. The results have demonstrated that besides the matching of work function values with the 2D material channel, the crystallinity of the contact electrodes is the other important parameter for the Ohmic contact formation of 2D material devices.

