Study of a Si-based light initiated multi-gate semiconductor switch for high temperatures

Area of Science:

• Power Electronics
• Semiconductor Devices
• Materials Science

Background:

• Traditional thyristors face limitations in turn-on time and electromagnetic interference resistance.
• Light-initiated multi-gate semiconductor switches (LIMS) offer advantages like faster switching and enhanced immunity.
• Optimizing LIMS performance at high temperatures is crucial for advanced power applications.

Purpose of the Study:

• To propose and investigate a new LIMS structure for improved high-temperature characteristics.
• To enhance the operational stability and efficiency of LIMS devices under demanding thermal conditions.
• To optimize key structural elements including the n+ layer, light gate, and edge termination.

Main Methods:

• Design and fabrication of a novel 23 mm diameter LIMS with optimized structural features.
• Experimental evaluation of leakage current at elevated temperatures (125 °C).
• Testing of output current and switching performance at various temperatures (-55 °C and 85 °C).

Main Results:

• Reduced leakage current from over 1 mA to 500 μA at 125 °C.
• Achieved output current of 10.2 kA at 4 kV and 85 °C.
• Demonstrated high output current of 12.1 kA at 4 kV and -55 °C, with di/dt > 30 kA/μs.

Conclusions:

• The proposed LIMS structure significantly enhances high-temperature performance and reliability.
• Optimized structural elements lead to substantial improvements in leakage current and current handling capabilities.
• The developed LIMS is suitable for high-power applications requiring stable operation across wide temperature ranges.