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Published on: June 3, 2015
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All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches
Chongbiao Luan1, Hongwei Liu1, Xun Ma1
1Key Laboratory of Pulsed Power, Institute of Fluid Physics, China Academy of Engineering Physics, P.O. Box 919-108, Mianyang 621900, China.
The Review of Scientific Instruments
|February 2, 2022
Summary
A new pulsed current injection source was developed to study transient electromagnetic pulse damage to electronic equipment cables. This device helps understand protection mechanisms against electromagnetic interference.
Area of Science:
- Electrical Engineering
- Electromagnetics
- Materials Science
Background:
- Transient electromagnetic pulses (TEMPs) pose a significant risk to electronic equipment.
- Understanding the damage and protection mechanisms of TEMPs on cables is crucial for electronic system reliability.
Purpose of the Study:
- To develop a novel all-solid-state pulsed current injection source.
- To investigate the damage and protection mechanisms of TEMPs on electronic equipment cables.
Main Methods:
- Development of an all-solid-state pulsed current injection source utilizing light-initiated multi-gate semiconductor switches.
- Characterization of the source's output, including peak current, risetime, and pulse width.
Main Results:
- The developed source achieved an output peak current range of 0.1-1 kA.
- The source exhibited a fast risetime of 18 ns and a pulse width of 520 ns.
- Consistent output current waveforms were observed.
Conclusions:
- The all-solid-state pulsed current injection source is a viable tool for studying TEMP effects.
- The developed source enables detailed investigation into TEMP damage and protection strategies for electronic cables.
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