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Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect.

Lixuan Tai1, Bingqian Dai1, Jie Li2

  • 1Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States.

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|September 20, 2022
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Summary

Distinguishing genuine topological Hall effect (THE) from artifacts requires careful analysis. This study confirms genuine THE with anomalous Hall effect (AHE) using transport and MOKE, differentiating it from two-component AHE through minor loops, temperature, and gate dependence.

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anomalous Hall effectmagnetic skyrmionsmagnetotransportmethods in magnetismtopological Hall effect

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Area of Science:

  • Condensed Matter Physics
  • Spintronics
  • Materials Science

Background:

  • The topological Hall effect (THE) is often identified by nonmonotonic features in the Hall signal, indicative of chiral spin textures like magnetic skyrmions.
  • The presence of the anomalous Hall effect (AHE) can create artifacts that mimic THE, complicating the distinction between genuine THE and two-component AHE.

Purpose of the Study:

  • To confirm genuine THE coexisting with AHE.
  • To develop and validate methods for distinguishing true THE from artifactual signals arising from complex AHE contributions.

Main Methods:

  • Transport measurements to analyze Hall signal characteristics.
  • Magneto-optical Kerr effect (MOKE) microscopy for direct visualization of magnetic textures.
  • Analysis of minor hysteresis loops.
  • Investigation of temperature and gate voltage dependencies.

Main Results:

  • Genuine THE with AHE was confirmed and found to occur in the AHE transition region.
  • Artifactual "THE" (two-component AHE) was observed beyond the saturation of the AHE component.
  • Distinct behaviors in minor loops, temperature dependence, and gate dependence were identified to differentiate genuine THE from artifacts.

Conclusions:

  • Genuine THE can be reliably distinguished from two-component AHE artifacts using a combination of transport, MOKE, and analysis of magnetic hysteresis, temperature, and gate dependencies.
  • The proposed methods provide a robust framework for researchers to accurately identify THE in materials exhibiting complex Hall effects.