Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect...

We report on the visible and near-infrared electroluminescence (EL) from the light-emitting device (LED) based on the erbium (Er)-doped ZnO (ZnO:Er)/SiO₂/n⁺-Si heterostructure, wherein an ∼10 nm thick SiO₂ intermediate layer serves as the energy plateau for producing hot electrons, which come from n⁺-Si via the trap-assisted tunneling mechanism. These hot electrons excite the doped Er³⁺ ions by inelastic collision, enabling the Er-related EL from the aforementioned LED. More importantly, by means of codoping the appropriate content of titanium (Ti) into the ZnO:Er film, the aforementioned Er-related emissions can be significantly enhanced. The density functional theory calculations indicate that the Ti-codoping improves rather than degrades the symmetry of the crystal field around the optically active Er³⁺ ions, hence not increasing the intra-4f transition probabilities of Er³⁺ ions. However, it is found that Ti-codoping nearly eliminates the segregation of Er³⁺ ions near the ZnO/SiO₂ interface. Moreover, Ti-codoping is derived to result in a number of Zn vacancies, which provide the sites for incorporating Er³⁺ ions in the ZnO matrix. For the above two reasons, the Ti-codoping promotes the incorporation of optically active Er³⁺ ions into the ZnO matrix, thus enhancing the EL from the aforementioned LED.