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Updated: Aug 28, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Intercalation leads to inverse layer dependence of friction on chemically doped MoS2
Ogulcan Acikgoz1,2, Enrique Guerrero3, Alper Yanilmaz4
1Department of Mechanical Engineering, University of California Merced, Merced, CA 95343, United States of America.
Abstract:
We present results of atomic-force-microscopy-based friction measurements on Re-doped molybdenum disulfide (MoS2). In stark contrast to the widespread observation of decreasing friction with increasing number of layers on two-dimensional (2D) materials, friction on Re-doped MoS2exhibits an anomalous, i.e. inverse, dependence on the number of layers. Raman spectroscopy measurements combined withab initiocalculations reveal signatures of Re intercalation. Calculations suggest an increase in out-of-plane stiffness that inversely correlates with the number of layers as the physical mechanism behind this remarkable observation, revealing a distinctive regime of puckering for 2D materials.
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