Atomically engineered interfaces yield extraordinary electrostriction

Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10^-19 m² V^-2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties^1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd₂O₃-doped CeO₂ and Er₂O₃-stabilized δ-Bi₂O₃ with atomically controlled interfaces on NdGaO₃ substrates. The value of the electrostriction coefficient achieved is 2.38 × 10^-14 m² V^-2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.