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Updated: Aug 28, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
Rectifying behavior in twisted bilayer black phosphorus nanojunctions mediated through intrinsic anisotropy
Vivekanand Shukla1, Anton Grigoriev1, Rajeev Ahuja1,2
1Condensed Matter Theory Group, Materials Theory Division, Department of Physics and Astronomy, Uppsala University Box 516 SE-75120 Uppsala Sweden Vivekanand.Shukla@physics.uu.se Anton.Grogoriev@physics.uu.se.
Abstract:
We explore the possibility of using van der Waals bonded heterostructures of stacked together 2D bilayer black phosphorus (BP) for nanoscale device applications. The electronic properties of BP in AA stacking and 90° twisted are studied with density functional theory. Furthermore, we study the homogeneous nanojunction architecture of BP to use its anisotropic properties. Using the first principles simulations along with the NEGF approach, we calculate the quantum transport properties of the nanojunction setup. The interlayer direction dependent current characteristics are explained in different setups. Our result revealed that the 90° twisted nanojunction device would be a potential rectifier despite having no p-n junction characteristics only due to the intrinsic anisotropy of the material, making tunneling between armchair- and zigzag-directional BP sheets asymmetric.
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