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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Rectifying optoelectronic memory based on WSe2/graphene heterostructures.

Sung Hyun Kim1, Myung Uk Park1, ChangJun Lee1

  • 1Department of Physics, Yonsei University 50 Yonsei-ro Seoul 03722 Republic of Korea khyoo@yonsei.ac.kr.

Nanoscale Advances
|September 22, 2022
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Summary
This summary is machine-generated.

We developed multifunctional WSe2/graphene heterostructure devices with a floating gate. These devices demonstrate tunable memory effects and synaptic functions, paving the way for advanced optoelectronic synapse applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals heterostructures are crucial for multifunctional devices.
  • Two-dimensional materials enable novel electronic and optoelectronic properties.

Purpose of the Study:

  • To report novel WSe2/graphene heterostructure devices with a top floating gate.
  • To demonstrate the multifunctional capabilities of these devices, including memory and synaptic emulation.

Main Methods:

  • Fabrication of WSe2/graphene heterostructures with a top floating gate.
  • Characterization of device performance under varying gate voltages and laser illumination.
  • Implementation of synaptic functions like potentiation, depression, and spike-timing-dependent plasticity.

Main Results:

  • Demonstrated gate-controlled rectification inversion and rectified nonvolatile memory effects.
  • Observed multilevel optoelectronic memory effects and staircase photoconductivity.
  • Successfully emulated excitatory and inhibitory synapses with tunable states.

Conclusions:

  • WSe2/graphene heterostructures with floating gates offer versatile device functionalities.
  • These devices can achieve high-density optoelectronic memory (128 states) with low nonlinearity.
  • The developed devices show significant potential for optoelectronic synapse applications.