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Updated: Aug 28, 2025

Nanostructured Ag-zeolite Composites as Luminescence-based Humidity Sensors
Published on: November 15, 2016
A ZnO/porous GaN heterojunction and its application as a humidity sensor
Chao Wang1,2, Hui Huang1,2, Miao-Rong Zhang1
1Division of Interdisciplinary Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 215123 Suzhou P. R. China gbpan2008@sinano.ac.cn.
Abstract:
A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and I-V characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12-96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.
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