Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

851
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
851
Types of Semiconductors01:20

Types of Semiconductors

890
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
890
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

449
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
449
Photoluminescence: Applications01:14

Photoluminescence: Applications

475
Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
475
Interfacial Electrochemical Methods: Overview01:06

Interfacial Electrochemical Methods: Overview

357
Interfacial electrochemical methods focus on the phenomena occurring at the boundary between an electrode and a solution, as opposed to bulk methods that concentrate on the solution's overall properties. These interfacial methods are classified as either static or dynamic based on the presence of a nonzero current in the electrochemical cell and the consistency of analyte concentrations. Static methods, such as potentiometry, measure the cell's potential without any significant current...
357

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Directly probing the carrier transfer length in 2D-material transistors.

Nature·2026
Same author

Scaling two-dimensional semiconductor nanoribbons for high-performance electronics.

Nature communications·2026
Same author

Fermi-level depinning achieved by high-work-function Au<sub>1-x</sub>Se<sub>x</sub> alloy contacts for high-performance p-type WSe<sub>2</sub> transistors.

Nature communications·2026
Same author

Breath ammonia test for chronic kidney disease screening: impact of fasting on diagnostic accuracy.

Clinical kidney journal·2026
Same author

Growth of Low-Defect WSe<sub>2</sub> Film via High-Purity van der Waals Crystal Precursor.

ACS nano·2026
Same author

From Materials to Electronics: A Personal Journey through Nano Letters.

Nano letters·2026
Same journal

Correction: Reduced hot-electron energy-loss rate induced by finite-square confinement potential in GaN/AlN, GaAs/AlAs, and GaSb/InAs nanostructured materials.

Nanoscale advances·2026
Same journal

Surface complexation and multilayer formation in the adsorption of NADA and phosphate on magnetic iron oxide nanoparticles: implications for bioseparation.

Nanoscale advances·2026
Same journal

Eco-friendly synthesis of silver nanoparticles as an unexplored application of photoredox catalysis.

Nanoscale advances·2026
Same journal

Facile fabrication of hollow carbon nanomaterials by directed polymerization of butadiyne on the surface of reverse micelles.

Nanoscale advances·2026
Same journal

Investigation of the chemical structure of core-shell Fe<sub>3</sub>O<sub>4</sub>@Ni<sub>1-<i>x</i></sub> Co <sub><i>x</i></sub> Fe<sub>2</sub>O<sub>4</sub> nanoparticles and its influence on their magnetic properties.

Nanoscale advances·2026
Same journal

Simple CsI doping outperforms complex organic additives in carbon-based perovskite solar cells.

Nanoscale advances·2026
See all related articles

Related Experiment Video

Updated: Aug 28, 2025

Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.3K

Bi2O2Se-based integrated multifunctional optoelectronics.

Dharmendra Verma1, Bo Liu2, Tsung-Cheng Chen1

  • 1Department of Electronic Engineering, Chang-Gung University Taoyuan 33302 Taiwan cslai@mail.cgu.edu.tw +886-3-2118800 ext. 5786.

Nanoscale Advances
|September 22, 2022
PubMed
Summary
This summary is machine-generated.

Bismuth oxy-selenide (Bi2O2Se) 2D materials exhibit efficient photoresponse, enabling multifunctional optoelectronic devices. This study demonstrates Bi2O2Se for memory, associative learning, logic gates, and binary-to-decimal conversion using controlled light wavelengths.

More Related Videos

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers
10:19

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

9.8K
A Dual-Functional Electroactive Filter Towards Simultaneously SbIII Oxidation and Sequestration
08:34

A Dual-Functional Electroactive Filter Towards Simultaneously SbIII Oxidation and Sequestration

Published on: December 5, 2019

5.6K

Related Experiment Videos

Last Updated: Aug 28, 2025

Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.3K
Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers
10:19

Solution-Processed "Silver-Bismuth-Iodine" Ternary Thin Films for Lead-Free Photovoltaic Absorbers

Published on: September 27, 2018

9.8K
A Dual-Functional Electroactive Filter Towards Simultaneously SbIII Oxidation and Sequestration
08:34

A Dual-Functional Electroactive Filter Towards Simultaneously SbIII Oxidation and Sequestration

Published on: December 5, 2019

5.6K

Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • 2D materials exhibit significant light-matter interactions, driving research in fundamental mechanisms and applications.
  • Controlled light-matter interactions are crucial for developing novel optoelectronic devices.

Purpose of the Study:

  • To demonstrate multifunctional optoelectronic applications using the photoresponse of Bismuth oxy-selenide (Bi2O2Se) 2D materials.
  • To showcase the versatility of a single Bi2O2Se structure for diverse electronic functions.

Main Methods:

  • Utilizing the efficient photoresponse of Bi2O2Se with precisely tuned multiple optical wavelengths.
  • Implementing UV light (365 nm) for optoelectronic memory write-in with SiO2 as the charge trapping medium.
  • Employing specific wavelengths (525 nm, 635 nm) for associative learning and logic gate operations (AND, OR, NAND, NOR).
  • Demonstrating a 4-bit binary-to-decimal converter using wavelengths from 385 nm to 740 nm.

Main Results:

  • A Bi2O2Se-based device functioned as optoelectronic memory, associative learning, and logic gates (AND, OR, NAND, NOR).
  • A 4-bit binary-to-decimal converter was successfully demonstrated using distinct wavelengths for binary inputs.
  • The device exhibited precise control over functions through tailored optical inputs.

Conclusions:

  • The study presents a paradigm for Bi2O2Se-based devices as integral components in advanced multifunctional electronic systems.
  • The efficient photoresponse of Bi2O2Se enables diverse, high-performance optoelectronic functionalities on a single platform.