Improvement in hole transporting ability and device performance of quantum dot light emitting diodes
Pei-Chieh Chiu1, Sheng-Hsiung Yang1
1Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University No. 301, Gaofa 3rd Road, Guiren District Tainan City 71150 Taiwan Republic of China yangsh@mail.nctu.edu.tw +886-6-3032535 +886-6-3032121 ext. 57895.
Abstract:
In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m-2 and current efficiency of 27.2 cd A-1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.
