Ice-assisted electron-beam lithography for MoS₂ transistors with extremely low-energy electrons

Ice-assisted electron-beam lithography (iEBL) by patterning ice with a focused electron-beam has emerged as a green nanofabrication technique for building nanostructures on diverse substrates. However, materials like atomically thin molybdenum disulfide (MoS₂), can be easily damaged by electron irradiation. To ensure the performance of devices based on sensitive materials, it is critical to control electron-beam induced radiolysis in iEBL processes. In this paper, we demonstrate that electron-beam patterning with extremely low-energy electrons followed by a heating process can significantly reduce the damage to substrate materials. A thin film of water ice not only acts as a sacrificial layer for patterning but also becomes a protecting layer for the underlying materials. As a result, MoS₂ field effect transistors with back-gate configuration and ohmic contacts have been successfully fabricated. Moreover, the presence or absence of such a protecting layer can lead to the retention or destruction of the underlying MoS₂, which provides a flexible method for creating electrical insulation or connection on 2D materials.