Extending Non-Ambiguity Range of Dual-Comb Ranging for a Mobile Target Based on FPGA

Ruoyu Liu1, Haoyang Yu2, Yue Wang1

  • 1Division of Advanced Manufacturing, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.

Sensors (Basel, Switzerland)
|September 23, 2022
PubMed

Related Concept Videos

Electronic Distance Measuring Instruments01:30

Electronic Distance Measuring Instruments

Electronic Distance Measuring Instruments (EDMs) are essential tools in modern surveying, offering precise distance measurements by emitting electromagnetic signals and calculating the time required for these signals to travel to a target and return. Two primary types of signals are used in EDMs — light waves and microwaves — each suited to specific environmental and distance requirements. Light-wave-based EDMs utilize either infrared or laser light, providing high accuracy over short...
85
IR Frequency Region: X–H Stretching01:24

IR Frequency Region: X–H Stretching

In IR spectroscopy, signals produced by the X−H bonds (such as C−H, O−H, or N−H) can be observed in the frequency range of  2700–4000 cm–1. The C−H stretching vibration forms sharp bands in the region 2850–3000 cm–1. The presence of the O−H stretching vibration leads to the forming of an absorption band in the frequency range 3650–3200 cm−1. At the same time, N−H stretching can be confirmed by absorption bands in...
1.0K
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
356