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Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Qiuwei Shi1,2, Izzat Aziz1, Jin-Hao Ciou1

  • 1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.

Nano-Micro Letters
|September 27, 2022
PubMed
Abstract

No abstract available in PubMed .

Keywords:
Al2O3/HfO2Flexible electronicNanolaminate dielectricThin-film transistors

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