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Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: Aug 26, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector.

Jun Yan¹, Feng Gao¹, Weiqiang Gong¹

¹Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University Harbin 150025 China physics_lin@hotmail.com lil@hrbnu.edu.cn.

|October 6, 2022

Summary

High-performance, self-powered photodetectors were developed using stable 2D perovskite materials. These devices offer excellent photovoltaic properties and imaging capabilities without external power, advancing optoelectronic applications.

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Last Updated: Aug 26, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Published on: October 23, 2018

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A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing

A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing

Published on: August 10, 2018

Area of Science:

Materials Science
Optoelectronics
Nanotechnology

Background:

Two-dimensional (2D) layered organic-inorganic hybrid perovskites offer enhanced stability and optoelectronic properties.
Perovskite materials are promising for advanced optoelectronic devices.

Purpose of the Study:

To develop a high-performance, self-powered photodetector using 2D perovskite materials.
To investigate the impact of an asymmetrical metal-semiconductor-metal (MSM) structure on device performance.

Main Methods:

Fabrication of an asymmetrical Pt-(PEA)2PbI4 SC-Ag device structure.
Regulation of interface Schottky barriers to create a strong built-in electric field.
Characterization of photovoltaic properties, photo-responsivity, response time, detectivity, and stability.

Main Results:

Achieved a high photo-responsivity of 114.07 mA W⁻¹ and detectivity of 4.56 × 10¹² Jones.
Demonstrated fast response times of 1.2 μs (rise) and 582 μs (fall).
Exhibited high-fidelity imaging capability at zero bias and excellent stability, retaining 99.4% responsivity after 84 days in air.

Conclusions:

The asymmetrical MSM device structure effectively utilizes the built-in electric field for self-powered operation.
The developed perovskite solar cell photodetector represents a significant advancement for stable, high-performance optoelectronic devices.