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Two-dimensional localization in GeSn.

Y Gul1, S N Holmes2, Chang-Woo Cho3

  • 1London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, United Kingdom.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|October 6, 2022
PubMed
Summary
This summary is machine-generated.

This study reveals abrupt localization in p-type GeSn quantum wells, showing thermally activated conductivity. This behavior is crucial for understanding disordered hole gases in future electronic devices.

Keywords:
Ge–Sn alloyselectrical transporthigh magnetic fieldslocalization

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Area of Science:

  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • p-type Germanium-Tin (GeSn) quantum wells (QWs) in metal-insulator-semiconductor devices exhibit unique localization behaviors.
  • Understanding carrier localization is key to advancing semiconductor device performance.

Purpose of the Study:

  • To investigate the localization behavior and conductivity transitions in p-type GeSn quantum wells.
  • To characterize the activation energies and the influence of magnetic fields on transport properties.

Main Methods:

  • Fabrication and characterization of p-type GeSn quantum well devices.
  • Electrical transport measurements across a range of temperatures and magnetic fields.
  • Analysis of conductivity, activation energy, and carrier density.

Main Results:

  • An abrupt transition to strongly localized behavior was observed at a hole carrier density of 1.55 × 10^11 cm^-2, with thermally activated conductivity.
  • The activation energy in the localized state was found to be 0.40 ± 0.05 meV.
  • Variable range hopping (VRH) transport was suppressed below 100 mK, even under high magnetic fields.

Conclusions:

  • Local disorder and variations in the density of states significantly influence the onset of localization in these GeSn QWs.
  • The suppression of VRH and the observed transport characteristics make this system suitable for studying many-body localization in thermally isolated disordered hole gases.