Polycrystalline silicon PhC cavities for CMOS on-chip integration.

Area of Science:

• Photonics and Optical Engineering
• Materials Science
• Semiconductor Manufacturing

Background:

• Optical interconnects are crucial for high-speed data transmission.
• Front End of Line (FEOL) compatible integration is essential for advanced semiconductor manufacturing.
• Polycrystalline silicon (poly:Si) offers potential for integrated photonics.

Purpose of the Study:

• To present an on-chip 2D and 3D photonics integration solution.
• To demonstrate the use of deposited polycrystalline silicon (poly:Si) for optical interconnects.
• To showcase high-Q Photonic Crystal (PhC) resonators fabricated with this material.

Main Methods:

• On-chip integration of deposited silicon on a bulk silicon wafer.
• Detailed discussion of processing steps and configurations for deposited silicon.
• Fabrication and characterization of high-Q Photonic Crystal (PhC) resonators using poly:Si.

Main Results:

• Successful on-chip 2D and 3D photonics integration compatible with FEOL.
• Demonstration of deposited silicon integration processing.
• Achieved high-Q Photonic Crystal (PhC) resonators using deposited poly:Si.

Conclusions:

• Deposited polycrystalline silicon (poly:Si) is a viable material for optical interconnects.
• This integration method supports next-generation 2D and 3D integrated optical systems.
• The developed technology enables advanced optical resonator applications in integrated photonics.