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Informatics-based computational lithography for phase-shifting mask optimization.

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Area of Science:

Semiconductor Manufacturing
Optical Lithography
Information Theory

Background:

Phase-shifting masks (PSM) are crucial for high-resolution semiconductor fabrication.
The theoretical limits of image fidelity in PSM lithography remain incompletely understood.

Purpose of the Study:

To unveil the information transmission mechanism of PSM in optical lithography using information theory.
To derive the theoretical lower bound of image error for PSM lithography.
To propose an informatics-based approach for PSM optimization.

Main Methods:

Establishment of an information channel model for PSM layout in optical lithography.
Derivation of optimal mutual information (OMI) based on information entropy.
Development of a computational lithography approach for PSM optimization.

Main Results:

The information transmission mechanism of PSM in lithography is elucidated.
The theoretical lower bound for PSM image error is determined.
The proposed informatics-based method enhances image fidelity over traditional algorithms.

Conclusions:

Information theory provides a framework for understanding PSM lithography limits.
The derived OMI and error bounds offer insights into PSM performance.
Informatics-based optimization significantly improves PSM image fidelity.