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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic
Iriya Muneta1, Takanori Shirokura2, Pham Nam Hai2
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Yokohama, Japan. muneta@ee.e.titech.ac.jp.
Scientific Reports
|October 13, 2022
Summary
Researchers modulated ferromagnetism in molybdenum disulfide (MoS2) using ultralow current. This discovery provides evidence of current-induced ferromagnetism at grain boundaries, enabling low-power magnetic memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Layered materials like MoS2 can exhibit unique properties via crystal structure modification.
- Ferromagnetism in polycrystalline MoS2 is of interest due to grain boundary-induced spin splitting, though direct evidence was lacking.
Purpose of the Study:
- To demonstrate ferromagnetism modulation in polycrystalline MoS2 using ultralow current density.
- To provide direct evidence of current-induced ferromagnetism at grain boundaries.
Main Methods:
- Investigated 7.5-nm-thick polycrystalline MoS2.
- Applied ultralow current densities (<10^3 A/cm^2).
- Analyzed magnetoresistance patterns (wide dip, nondip, narrow dip) as a function of current intensity.
Main Results:
- Successfully modulated ferromagnetism with ultralow current density.
- Observed distinct magnetoresistance patterns correlating with current intensity.
- Attributed magnetoresistance to the interaction between bulk 4d electrons and grain boundary 4d spins.
Conclusions:
- Provided direct evidence of current modulation of ferromagnetism induced by grain boundaries in MoS2.
- Findings suggest a novel, low-power method for magnetization switching.
- Opens avenues for developing low-power magnetic random access memories (MRAM).
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