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Effect of Ta Interlayers on Texture and Magnetic Properties of FeSi Films with Micrometer Thickness
Jialian He1, Zhong Zhang1, Zhihao Bao2
1MOE Key Laboratory of Advanced Micro-Structured Materials, Institute of Precision Optical Engineering (IPOE), School of Physics Science and Engineering, Tongji University, Shanghai 200092, China.
Abstract:
Magnetized soft ferromagnetic films with micrometer thickness were studied. A FeSi film, with a total thickness of 2000 nm, separated by 10 nm-thick Ta interlayers, was fabricated using the direct-current magnetron sputtering technique. The thickness of each FeSi layer between adjacent Ta layers was 100 nm. Hysteresis loop measurement was used to characterize the magnetic properties of the layer. X-ray diffraction patterns and high-resolution transmission electron microscopy were used to characterize its texture. The experimental results showed that the FeSi film separated by Ta interlayers exhibited a lower saturation magnetization and a higher coercivity than those of the 1140 nm-thick FeSi film. The insertion of Ta interlayers resulted in the disappearance of the crystal plane of FeSi (221), and better texture of the crystal plane of FeSi (210). The FeSi film exhibited a crystal plane of FeSi (210) with a bcc crystalline structure. The Ta interlayers were partially amorphous, exhibiting crystal plane of Ta (002) and TaSi2 (310). The matching of magnetic properties between interlayers and soft magnetic layers played an important role in maintaining its soft magnetic properties.
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