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Band Theory02:35

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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Indirect Band Gap in Scrolled MoS2 Monolayers.

Jeonghyeon Na1, Changyeon Park1, Chang Hoi Lee1

  • 1School of Physics, Konkuk University, Seoul 05029, Korea.

Nanomaterials (Basel, Switzerland)
|October 14, 2022
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Summary

Researchers created molybdenum disulfide (MoS2) nanoscrolls from monolayers. These nanoscrolls exhibit tunable band gaps, shifting from direct to indirect, offering new possibilities for 2D material applications.

Keywords:
1D structureMoS2band gapionic liquid gatingrolled structurescrolled MoS2

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Molybdenum disulfide (MoS2) is a 2D material with tunable electronic properties.
  • Modifying the structure of 2D materials, such as rolling them into scrolls, can alter their band gaps.

Purpose of the Study:

  • To investigate the optical and transport band gaps of MoS2 nanoscrolls.
  • To understand how the scrolling process affects the electronic properties of MoS2 monolayers.
  • To explore MoS2 nanoscrolls as quasi-1D nanostructures.

Main Methods:

  • Generation of MoS2 nanoscrolls from MoS2 monolayers with inner core radii of approximately 250 nm.
  • Photoluminescence spectroscopy to determine optical band gaps.
  • Transport measurements using ambipolar ionic-liquid-gated transistors to determine transport band gaps.

Main Results:

  • MoS2 monolayers, initially direct gap semiconductors (~1.85 eV), transition to indirect gap semiconductors (~1.6 eV) upon scrolling.
  • The indirect band gap of MoS2 nanoscrolls (~1.6 eV) is larger than that of MoS2 bilayers (~1.54 eV), suggesting weaker interlayer interactions.
  • Transport measurements revealed a band gap of approximately 1.9 eV for the nanoscrolls.
  • An exciton binding energy of 0.3 eV was determined for the MoS2 nanoscrolls.

Conclusions:

  • Rolling 2D MoS2 atomic layers into nanoscrolls creates novel quasi-1D nanostructures.
  • The scrolling process significantly modifies the band gap of MoS2, offering a new method for tuning electronic properties of 2D materials.