Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

926
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
926

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High-Efficiency Near-Infrared Beam Steering Enabled by a CMOS-Driven Liquid-Crystal Metasurface.

Nano letters·2026
Same author

End-to-end neural refocusing with Fourier slice constraints for fast light-field hologram generation.

Optics letters·2025
Same author

High-fidelity light-field holographic display via spatiotemporal spectrum expansion and speckle noise suppression.

Optics express·2025
Same author

GSDME-dependent astrocyte pyroptosis promotes the progression of neuroinflammation in experimental cerebral malaria.

Apoptosis : an international journal on programmed cell death·2025
Same author

CXCL10<sup>high</sup>TNFα<sup>high</sup>Ki67<sup>+</sup> Microglia Recruit and Activate CD8<sup>+</sup> T Cells in the Brainstem During Experimental Cerebral Malaria.

CNS neuroscience & therapeutics·2025
Same author

An ultra-compact integrated phase shifter <i>via</i> electrically tunable meta-waveguides.

Nanoscale horizons·2025

Related Experiment Video

Updated: Aug 25, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
13:44

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

15.4K

Infrared metasurface absorber based on silicon-based CMOS process.

Yichen Zhang, Zhihai Wu, Jun Xia

    Optics Express
    |October 15, 2022
    PubMed
    Summary

    This study introduces an infrared metasurface absorber integrated into Liquid Crystal on Silicon Spatial Light Modulators (LCoS-SLMs). This novel design effectively reduces zero-order light interference, enhancing device performance for various optical applications.

    More Related Videos

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
    08:48

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

    Published on: September 25, 2020

    5.8K
    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
    09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.3K

    Related Experiment Videos

    Last Updated: Aug 25, 2025

    Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
    13:44

    Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

    Published on: December 27, 2012

    15.4K
    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
    08:48

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

    Published on: September 25, 2020

    5.8K
    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
    09:33

    Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces

    Published on: June 7, 2019

    6.3K

    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Semiconductor Devices

    Background:

    • Metasurfaces with metal-insulator-metal (MIM) structures exhibit wavelength-specific light absorption.
    • Liquid Crystal on Silicon Spatial Light Modulators (LCoS-SLMs) can suffer from zero-order light interference due to pixel gaps, impacting modulation efficiency.

    Purpose of the Study:

    • To propose and demonstrate an infrared metasurface absorber compatible with silicon-based Complementary Metal Oxide Semiconductor (CMOS) processes.
    • To integrate this absorber into LCoS-SLMs to mitigate zero-order light interference and improve device performance.

    Main Methods:

    • Fabrication of an infrared metasurface absorber using a silicon-based CMOS process.
    • Integration of the metasurface absorber as an absorbing layer within an LCoS chip, positioned between pixel units and the CMOS driver circuit.
    • Experimental evaluation of the LCoS-SLM with the integrated metasurface absorber to assess its effect on zero-order light and modulation efficiency.

    Main Results:

    • The integrated infrared metasurface absorber significantly reduced zero-order light interference between pixel gaps in the LCoS-SLM.
    • A notable improvement in the modulation efficiency of the LCoS-SLM was observed.
    • The silicon-based CMOS fabrication process offers a low-cost manufacturing route.

    Conclusions:

    • The proposed LCoS-SLM incorporating an infrared metasurface absorber effectively suppresses zero-order light interference.
    • The integration leads to enhanced modulation efficiency, offering a low-cost solution.
    • This technology holds significant potential for applications in holographic displays, optical computing, and optical communication.