First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Semiconductor Device Physics

Background:

• Investigating novel two-dimensional (2D) materials for next-generation electronics.
• Exploring alternatives to silicon for advanced semiconductor applications.
• Understanding the fundamental electronic and transport properties of Gallium Oxide (Ga2O3).

Purpose of the Study:

• To investigate the electronic and transport properties of monolayer Gallium Oxide (ML Ga2O3).
• To evaluate the performance of ML Ga2O3-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs).
• To assess the potential of ML Ga2O3 as a channel material for post-silicon era electronics.

Main Methods:

• First-principles calculations using density functional theory (DFT).
• Non-equilibrium Green's function (NEGF) formalism for transport properties.
• Consideration of phonon scattering mechanisms for accurate mobility calculations.

Main Results:

• ML Ga2O3 exhibits a quasi-direct band gap of 4.92 eV.
• High electron mobilities of 1210 cm² V⁻¹ s⁻¹ (x-direction) and 816 cm² V⁻¹ s⁻¹ (y-direction) at 300 K.
• ML Ga2O3 n-MOSFETs demonstrate superior on-current (2890 μA/μm at 5 nm gate length) compared to other 2D materials.
• Device performance meets International Technology Roadmap for Semiconductors (ITRS) demands for high-performance and low-power applications, even at sub-5 nm gate lengths.
• Optimized ML Ga2O3 n-MOSFETs can fulfill ITRS requirements for 1 nm gate lengths.
• Comparative analysis of 32-bit arithmetic logic unit (ALU) performance shows ML Ga2O3 competitiveness with beyond-CMOS devices.

Conclusions:

• ML Ga2O3 possesses excellent electronic and transport properties suitable for high-performance transistors.
• The material demonstrates significant potential for future electronic devices, especially in the post-silicon era.
• ML Ga2O3 offers a promising pathway for developing advanced semiconductor channel materials beyond current silicon technology.