Selective band amplification in ultra-broadband superimposed quantum dot reflective semiconductor optical amplifiers

In this paper, an approach is proposed for an ultra-broadband quantum dot (QD) reflective semiconductor optical amplifier using superimposed QDs with switching and band selection capability in the supported band. Furthermore, about 1 µm optical bandwidth is covered (O, E, S, C, and L bands), which is the desired region in most optical communication applications. Three optical windows are selected for optimized amplification (1.55 µm, 1.5 µm, 1.31 µm). Also, they can be amplified either simultaneously or one at a time, which guarantees independent modulation. This is a remarkable property in fast data transmission. The amplifier is devised by solution process nanotechnology, which guarantees its synthesizing feasibility with low cost. Finally, by introducing this amplifier, one step is taken toward the development of fast wavelength division multiplexing passive optical networks.