Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry.

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Precise elemental analysis of nanoscale patterns is crucial for advanced manufacturing.
• Existing methods may lack the sensitivity or site-specificity required for complex nanostructures.
• Area-selective deposition requires accurate quantification of material distribution at the nanoscale.

Purpose of the Study:

• To develop and demonstrate a site-specific elemental analysis technique for nano-scale patterns.
• To quantify the area-selective deposition of ruthenium (Ru) on SiO2-TiN line-space patterns.
• To achieve high sensitivity and accuracy in elemental analysis of nanostructures.

Main Methods:

• Utilizing Rutherford backscattering spectrometry (RBS) for data acquisition.
• Analyzing large ensembles of identical nanostructures to enhance detection limits.
• Exploiting ion energy loss effects within nanostructures for depth-resolved analysis.
• Employing ion-trajectory calculations for spectrum deconvolution.

Main Results:

• Successful site-specific elemental analysis of 35 nm linewidth / 90 nm pitch SiO2-TiN patterns.
• Quantification of ruthenium selectivity on SiO2 line tops versus sidewalls.
• Achieved a sensitivity limit of 10^13 atoms/cm^2 for ruthenium detection.
• Demonstrated quantitative, traceable, and highly accurate analysis.

Conclusions:

• RBS is a powerful technique for site-specific elemental analysis of nanostructures.
• The developed method enables precise quantification of area-selective deposition.
• This approach is vital for process control and optimization in nanotechnology.