Electron Microscope Tomography and Single-particle Reconstruction
Atomic Force Microscopy
Atomic Absorption Spectroscopy: Atomization Methods
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Updated: Jan 6, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Jhao-Rong Lin1,2, Richard J H Morris1, Jeroen E Scheerder1
1imec, Kapeldreef 75, Leuven B-3001, Belgium.
Atom probe tomography reveals nanoscale dopant inhomogeneity in silicon germanium. This method correlates boron doping levels with matrix composition changes, offering insights into semiconductor growth processes.
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