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A Statistical Approach for Evaluating the Spatial Distribution and Local Atomic Environment of Dopants Using Atom

Jhao-Rong Lin1,2, Richard J H Morris1, Jeroen E Scheerder1

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Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|November 12, 2025
PubMed
Summary

Atom probe tomography reveals nanoscale dopant inhomogeneity in silicon germanium. This method correlates boron doping levels with matrix composition changes, offering insights into semiconductor growth processes.

Keywords:
in situ dopingatom probe tomographylocal chemical environmentspatial distribution

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Dopant spatial inhomogeneity impacts semiconductor performance.
  • Understanding nanoscale dopant distribution is crucial for advanced materials.

Purpose of the Study:

  • To develop a method for characterizing nanoscale dopant inhomogeneity and local chemical environment.
  • To investigate dopant distribution in boron-doped silicon germanium.

Main Methods:

  • Atom probe tomography for atomic-scale analysis.
  • Nearest-neighbor atom local composition analysis.
  • Kolmogorov-Smirnov or Anderson-Darling statistical tests for inhomogeneity assessment.

Main Results:

  • Demonstrated inhomogeneous distribution of boron, silicon, and germanium.
  • Established a correlation between boron doping levels and surrounding matrix composition variations.
  • Provided atomic-scale insights into dopant incorporation and epitaxial growth.

Conclusions:

  • The developed method effectively characterizes nanoscale dopant inhomogeneity.
  • Dopant incorporation behavior is linked to epitaxial growth in silicon germanium.
  • Offers new experimental understanding of dopant behavior in semiconductors.