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Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Aug 24, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

Superior Quality Low-Temperature Growth of Three-Dimensional Semiconductors Using Intermediate Two-Dimensional

Guanyu Zhou¹, Rehan Younas¹, Tian Sun¹

¹Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana46556, United States.

|October 24, 2022

Summary

Researchers developed a novel method for growing high-quality 3D semiconductors at over 200 °C lower temperatures. This breakthrough utilizes two-dimensional (2D) materials as intermediate layers, enhancing atomic diffusion for superior material properties in advanced electronics.

Keywords:

intermediate layers kinetic barrier low-temperature growth nucleation theory remote epitaxy two-dimensional materials

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Materials Science
Semiconductor Physics
Nanotechnology

Background:

Low-temperature growth of high-performance semiconductors is vital for advanced technologies like 3D integrated circuits and flexible electronics.
Insufficient atomic diffusion at low temperatures leads to poor material quality and limits device performance.

Purpose of the Study:

To demonstrate superior quality growth of 3D semiconductors at significantly reduced temperatures (>200 °C).
To investigate the use of two-dimensional (2D) materials as intermediate layers for optimizing adatom diffusion and material quality.

Main Methods:

Utilized 2D materials (WSe2, graphene) as intermediate layers between substrate and 3D semiconductor (GaN, ZnSe).
Analyzed material properties using techniques including diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements.
Investigated the role of 2D layers in modifying potential energy barriers and kinetic barriers for atomic diffusion.

Main Results:

Achieved enhanced material quality, including larger grains, preferred orientation, and reduced strain, at growth temperatures >200 °C lower than direct growth.
Demonstrated improved carrier mobility in GaN and ZnSe grown with 2D intermediate layers.
Confirmed the mechanism involves maintaining but reducing the potential field and lowering kinetic barriers via the 2D layer's inert surface.

Conclusions:

The use of 2D intermediate layers enables high-performance 3D semiconductor growth under strict thermal budget constraints.
This approach facilitates transformative technologies and opens possibilities for novel 2D/3D heterostructure devices.