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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

Ruoyu Wang1, Jingwei Guo1, Chang Liu1

  • 1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Micromachines
|October 27, 2022
PubMed

Keywords:
heterojunction diodesilicon carbidetrench MOSFET

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