Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

402
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
402
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

378
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
378
Characteristics of MOSFET01:17

Characteristics of MOSFET

419
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
419
MOSFET01:16

MOSFET

513
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
513
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

394
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
394
MOS Capacitor01:25

MOS Capacitor

839
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
839

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n<sup>-</sup>/n<sup>+</sup>-Buffer Layer.

Micromachines·2022
Same author

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode.

Micromachines·2022
Same author

A Novel AlGaN/Si<sub>3</sub>N<sub>4</sub> Compound Buffer Layer HEMT with Improved Breakdown Performances.

Micromachines·2022
Same author

Investigations of coupling characters in ionic liquids formed between the 1-ethyl-3-methylimidazolium cation and the glycine anion.

The journal of physical chemistry. B·2008
Same author

Mercury exposure in the population from Wuchuan mercury mining area, Guizhou, China.

The Science of the total environment·2008
Same author

Swelling characteristics and drug delivery properties of nifedipine-loaded pH sensitive alginate-chitosan hydrogel beads.

Journal of biomedical materials research. Part B, Applied biomaterials·2008
Same journal

Correction: Kang et al. Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester. <i>Micromachines</i> 2024, <i>15</i>, 581.

Micromachines·2026
Same journal

Femtosecond Laser Texturing of Wood Coatings with Bio-Based Epoxy and Wax Additives for Enhanced Hydrophobicity.

Micromachines·2026
Same journal

Engineering of Optoelectronic Devices for Renewable Energy Applications.

Micromachines·2026
Same journal

Phase Transformation and Electrochemical Behavior of Hexagonal TiO<sub>2</sub> Nanotubes Under Different Annealing Temperatures and Heating Rates.

Micromachines·2026
Same journal

Process Optimization and Predictive Modeling of Femtosecond Laser Precision Milling for Commercial PMMA Slices.

Micromachines·2026
Same journal

A Hybrid Preprocessing Multi-Objective Surrogate Model for Thermal MEMS Actuators.

Micromachines·2026
See all related articles

Related Experiment Video

Updated: Jul 21, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.7K

A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching.

Ping Li1,2, Jingwei Guo1, Shengdong Hu1

  • 1Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

Micromachines
|July 29, 2023
PubMed
Summary
This summary is machine-generated.

A novel silicon carbide MOSFET with an embedded MOS-channel diode significantly improves third-quadrant performance. This design lowers the diode cut-in voltage and reduces switching losses for enhanced power electronics applications.

Keywords:
MOS-channel diodeSiC MOSFETbipolar degradationreverse conductionsplit-gate

More Related Videos

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

Related Experiment Videos

Last Updated: Jul 21, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.7K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K
Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
11:44

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

Published on: August 15, 2014

10.4K

Area of Science:

  • Power Electronics
  • Semiconductor Devices
  • Materials Science

Background:

  • Conventional silicon carbide (SiC) MOSFETs suffer from bipolar degradation due to intrinsic body diode conduction during freewheeling.
  • Enhancing third-quadrant operation and switching performance in SiC MOSFETs is crucial for efficient power conversion.

Purpose of the Study:

  • To propose and investigate a novel split-gate SiC MOSFET with an embedded MOS-channel diode.
  • To enhance third-quadrant performance and reduce switching losses in SiC MOSFETs.

Main Methods:

  • Technology Computer-Aided Design (TCAD) simulations were employed to study the proposed device.
  • An analytical model was developed to explain the barrier-lowering effect of the MOS-channel diode.
  • Device parameters including diode cut-in voltage, gate-to-drain charge (QGD), and reverse-transfer capacitance (CGD) were analyzed.

Main Results:

  • The proposed SiC MOSFET with an embedded MOS-channel diode exhibited a reduced diode cut-in voltage from 2.7 V to 1.2 V.
  • The split-gate structure led to significantly lower QGD (20 vs. 230 nC/cm²) and CGD (14 vs. 105 pF/cm²).
  • These improvements result in a better high-frequency figure-of-merit and lower switching losses.

Conclusions:

  • The novel split-gate SiC MOSFET effectively suppresses intrinsic body diode conduction, preventing bipolar degradation.
  • The embedded MOS-channel diode provides a low potential barrier, enhancing third-quadrant performance.
  • The device demonstrates superior switching characteristics and reduced losses, making it suitable for high-frequency applications.