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Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices.

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Graphene oxide exhibits reliable resistive switching through metallic filaments, contact modification, and bulk changes. This study confirms all three mechanisms operate simultaneously in Al/GO/n-Si structures, offering new insights into electronic device functionality.

Keywords:
electron beam-induced currentgraphene oxideoperative mechanismresistive switching

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene oxide (GO) is a key material for resistive switching applications.
  • Existing models for GO resistive switching include filamentary conduction, contact resistance modification, and bulk oxidation/reduction.
  • The simultaneous operation of these mechanisms in GO remains under investigation.

Purpose of the Study:

  • To investigate the operative mechanisms of resistive switching in graphene oxide.
  • To determine if multiple switching mechanisms can occur simultaneously in Al/GO/n-Si structures.
  • To elucidate the role of the aluminum/graphene oxide interface and local properties of conductive channels.

Main Methods:

  • Fabrication of Al/GO/n-Si structures.
  • Electron beam-induced current (EBIC) imaging to detect conduction channels.
  • Raman spectroscopy to analyze changes in graphene oxide bulk properties.
  • Capacitance-voltage (C-V) measurements to probe interface effects.

Main Results:

  • Demonstrated simultaneous operation of metallic filamentary conduction, contact resistance modification, and bulk oxidation/reduction in GO resistive switching.
  • EBIC revealed multiple point-like conduction channels and large areas of increased conductivity.
  • Raman spectroscopy and C-V measurements provided evidence for interface involvement and changes in GO bulk resistivity.
  • Identified unique local properties of conductive channels, including charge state changes and work function modification.

Conclusions:

  • All three proposed mechanisms contribute to resistive switching in graphene oxide.
  • The Al/GO interface plays a significant role in the switching process.
  • Understanding these mechanisms is crucial for developing advanced electronic devices based on graphene oxide.