Related Experiment Video
Updated: Aug 23, 2025

Synthesis and Microdiffraction at Extreme Pressures and Temperatures
Published on: October 7, 2013
Emergent, Non-Aging, Extendable, and Rechargeable Exchange Bias in 2D Fe3 GeTe2 Homostructures Induced by Moderate
Caixing Liu1,2, Huisheng Zhang3, Shunhong Zhang2
1Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
Abstract:
As a crucial concept in magnetism and spintronics, exchange bias (ExB) measures the asymmetry in the hysteresis loop of a pinned ferromagnet (FM)/antiferromagnet (AFM) interface. Previous studies are mainly focused on FM/AFM heterostructures composed of conventional bulk materials, whose complex interfaces prohibit precise control and full understanding of the phenomenon. Here, the enabling power of 2D magnets is exploited to demonstrate the emergence, non-aging, extendability, and rechargeability of ExB in van der Waals Fe3 GeTe2 homostructures, upon moderate pressuring. The emergence of the ExB is attributed to a local stress-induced FM-to-AFM transition, as validated using first-principles calculations, and confirmed in magneto-optical Kerr effect and second harmonic generation measurements. It is also observed that, negligible ExB aging before the training effect suddenly takes place through avalanching, pronounced delay of the avalanche via timed pressure repetition (extendability), ExB recovery in the post-training sample upon refreshed pressuring (rechargeability), and demonstrate its versatile tunability. These striking findings offer unprecedented insights into the underlying principles of ExB and its training, with immense technological applications in sight.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Related Concept Videos
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Crystal Field Theory - Tetrahedral and Square Planar Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...