Related Experiment Video
Updated: Aug 23, 2025
09:51
Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
12.9K
Efficient Hot Electron Capture in CuPc/MoSe2 Heterostructure Assisted by Intersystem Crossing
Jianwei Ding1,2, Shaohua Fu3, Kui Hu1,2
1CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Nano Letters
|October 27, 2022
Summary
Researchers achieved over 78% hot electron transfer efficiency at an organic-inorganic interface using copper phthalocyanine (CuPc) and molybdenum diselenide (MoSe2). This breakthrough advances photovoltaic devices beyond theoretical limits.
Area of Science:
- Materials Science
- Photovoltaics
- Organic Electronics
Background:
- Efficient hot electron extraction is key for next-generation photovoltaics exceeding the Shockley-Queisser limit.
- Experimental validation of hot electron harvesting at organic-inorganic interfaces remains limited.
Purpose of the Study:
- To investigate hot electron dynamics at the copper phthalocyanine (CuPc)/molybdenum diselenide (MoSe2) interface.
- To demonstrate efficient hot electron transfer and harvesting in an organic-inorganic hybrid system.
Main Methods:
- Utilized steady-state spectroscopy and transient absorption spectroscopy.
- Analyzed photogenerated hot electron transfer from MoSe2 to CuPc.
Main Results:
- Achieved a hot electron transfer efficiency exceeding 78% from MoSe2 to CuPc.
- Observed formation of singlet and triplet charge transfer states.
- Demonstrated inhibition of back-donation and facilitated exciton dissociation into CuPc polarons with nanosecond lifetime.
Conclusions:
- The CuPc/MoSe2 interface enables efficient hot electron extraction.
- Rapid intersystem crossing of hybrid electronic states is a viable mechanism for hot electron harvesting.
- This approach offers a promising route for developing advanced photovoltaic devices.
Keywords:
electronic couplinghot electronintersystem crossingorganic−inorganic heterostructuretransient absorption spectroscopyMore Related Videos
Related Concept Videos
01:22MOSFET: Enhancement Mode
448
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
448
01:22Carrier Generation and Recombination
688
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
688
01:24Metal-Semiconductor Junctions
437
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
437
01:26Photochemical Electrocyclic Reactions: Stereochemistry
1.9K
The absorption of UV–visible light by conjugated systems causes the promotion of an electron from the ground state to the excited state. Consequently, photochemical electrocyclic reactions proceed via the excited-state HOMO rather than the ground-state HOMO. Since the ground- and excited-state HOMOs have different symmetries, the stereochemical outcome of electrocyclic reactions depends on the mode of activation; i.e., thermal or photochemical.
Selection Rules: Photochemical Activation
Selection Rules: Photochemical Activation
1.9K
01:26Thermal and Photochemical Electrocyclic Reactions: Overview
2.4K
Electrocyclic reactions are reversible reactions. They involve an intramolecular cyclization or ring-opening of a conjugated polyene. Shown below are two examples of electrocyclic reactions. In the first reaction, the formation of the cyclic product is favored. In contrast, in the second reaction, ring-opening is favored due to the high ring strain associated with cyclobutene formation.
2.4K
01:27Biasing of Metal-Semiconductor Junctions
313
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
313