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Published on: June 8, 2022
Spin-vibronic interaction induced reverse intersystem crossing: A case study with TXO-TPA and TXO-PhCz molecules
Pijush Karak1, Kenneth Ruud2, Swapan Chakrabarti1
1Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, West Bengal, India.
Direct spin-orbit (DSO) and spin-vibronic (SV) coupling significantly influence reverse intersystem crossing (RISC) in TXO-TPA and TXO-PhCz molecules. Solvent dielectric properties modulate the SV mechanism, impacting RISC rates and enhancing thermally activated delayed fluorescence efficiency.
Area of Science:
- Photophysics and photochemistry
- Organic electronics
- Quantum chemistry
Background:
- Reverse intersystem crossing (RISC) is crucial for efficient thermally activated delayed fluorescence (TADF) emitters.
- Understanding the factors governing RISC rates is essential for designing high-performance organic optoelectronic devices.
Purpose of the Study:
- To investigate the contributions of direct spin-orbit (DSO) coupling and spin-vibronic (SV) coupling to the RISC mechanism in TXO-TPA and TXO-PhCz molecules.
- To elucidate the role of solvent dielectric properties on the RISC process.
- To correlate RISC rates with the efficiency of TADF.
Main Methods:
- Calculation of the RISC rate constant (kRISC) using a time-dependent correlation function-based method.
- Application of second-order perturbation theory.
- Investigation in two different solvents: toluene and chloroform.
Main Results:
- The RISC rate constant (kRISC) is influenced by both DSO and SV coupling, with the latter being solvent-dependent.
- For TXO-TPA, kRISC is primarily governed by DSO coupling, irrespective of the solvent.
- For TXO-PhCz, the SV mechanism contributes over 30% to kRISC in chloroform, while being less significant in toluene.
- Higher nonadiabatic coupling (NAC) values between T2 and T1 states were observed for TXO-PhCz, particularly in chloroform.
Conclusions:
- The solvent-assisted SV mechanism plays a significant role in enhancing the net RISC rate constant.
- The interplay between DSO, SV coupling, and solvent dielectric properties dictates RISC efficiency.
- Optimizing these factors can maximize the efficiency of TADF emitters.
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