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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
Ki-Sik Im1, Seungheon Shin2, Chan-Hee Jang2
1Department of Green Semiconductor System, Daegu Campus, Korea Polytechnics, Daegu 41765, Korea.
Materials (Basel, Switzerland)
|November 11, 2022
Summary
Low-frequency noise measurements reveal trap-related Poole-Frenkel transport in HfO2-based metal-ferroelectric-metal (MFM) capacitors. This study is the first to use LFN to confirm leakage behavior in these MFM devices.
Area of Science:
- Materials Science
- Solid-State Physics
- Electrical Engineering
Background:
- Hafnium oxide (HfO2)-based ferroelectric materials are crucial for advanced electronic devices.
- Understanding charge transport mechanisms in metal-ferroelectric-metal (MFM) capacitors is essential for device optimization.
- Low-frequency noise (LFN) is a sensitive probe for investigating charge transport phenomena.
Purpose of the Study:
- To investigate the transport mechanism of HfO2-based MFM capacitors using LFN measurements for the first time.
- To identify the dominant leakage current mechanism in these capacitors.
- To analyze the noise characteristics and their relation to the transport mechanism.
Main Methods:
- Fabrication of HfO2-based MFM capacitors.
- Current-voltage (I-V) characterization to determine leakage behavior.
- Low-frequency noise (LFN) measurements to analyze noise power spectral densities (S).
- Analysis of noise behavior in relation to electric field (E) and current (I).
Main Results:
- I-V measurements indicated that leakage behavior is governed by the trap-related Poole-Frenkel transport mechanism.
- LFN measurements confirmed the Poole-Frenkel transport mechanism.
- Noise power spectral densities followed 1/f noise shapes.
- A constant electric field (E) × S/I^2 noise behavior was observed.
- No polarization dependency was found in transport characteristics due to structural symmetry.
Conclusions:
- The study successfully identified the trap-related Poole-Frenkel mechanism as dominant in HfO2-based MFM capacitors.
- LFN measurements provide a powerful tool for characterizing transport mechanisms in ferroelectric devices.
- The symmetric structure of the MFM capacitor leads to polarization-independent transport properties.
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