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Updated: Aug 22, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
Ki-Sik Im1, Seungheon Shin2, Chan-Hee Jang2
1Department of Green Semiconductor System, Daegu Campus, Korea Polytechnics, Daegu 41765, Korea.
Abstract:
The transport mechanism of HfO2-based metal-ferroelectric-metal (MFM) capacitors was investigated using low-frequency noise (LFN) measurements for the first time. The current-voltage measurement results revealed that the leakage behavior of the fabricated MFM capacitor was caused by the trap-related Poole-Frenkel transport mechanism, which was confirmed by the LFN measurements. The current noise power spectral densities (S) obtained from the LFN measurements followed 1/f noise shapes and exhibited a constant electric field (E) × S/I2 noise behavior. No polarization dependency was observed in the transport characteristics of the MFM capacitor owing to its structural symmetry.
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