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X-ray Diffuse Scattering from Ca3NbGa3Si2O14 Single Crystal under External Electric Field Application
Dmitrii Irzhak1, Dmitry Roshchupkin1
1Institute of Microelectronics Technology and High-Purity Materials Russian Academy of Sciences, 142432 Chernogolovka, Russia.
Abstract:
X-ray diffuse scattering from the Ca3NbGa3Si2O14 (CNGS) crystal was measured with a triple axis X-ray diffractometer under the conditions of an external electric field. It is found that the nature of the intensity distribution of the asymmetrical part of diffuse scattering depends on the value of the applied electric field. This phenomenon is apparently associated with different piezoelectric characteristics of defect regions and the rest of the single crystal.
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