Related Experiment Video
Updated: Aug 22, 2025
07:12
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
9.7K
Tuning the optical absorption performance of MoS2 monolayers with compressive strain
Yibin Zhao1, Zhengwei Du1, Licheng Wang2
1MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China. ekan@njust.edu.cn.
Nanoscale
|November 11, 2022
Summary
Researchers developed a new method to study how compressive strain affects molybdenum disulfide (MoS2) monolayers. Optical absorption shows a blueshift then redshift, verified by theory, enabling new optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Strain engineering is key for tuning 2D material properties.
- Investigating compressive strain effects is challenging due to substrate fixation and focal distance issues.
Purpose of the Study:
- To develop a method for studying optical properties of 2D materials under compression.
- To investigate the strain-dependent optical absorption of Molybdenum Disulfide (MoS2) monolayers.
Main Methods:
- Fabrication of a custom strain loading device.
- Development of a compressive strain measurement technique.
- Optical absorption spectroscopy of MoS2 monolayers.
- Density Functional Theory (DFT) calculations for verification.
Main Results:
- Observed a distinct trend of initial blueshift followed by redshift in optical absorption spectra under compression.
- Experimentally validated the strain-induced optical property changes.
- Theoretically confirmed the observed peak position shifts using DFT.
Conclusions:
- The developed method provides a feasible approach for characterizing 2D materials under compressive strain.
- Findings expand possibilities for next-generation micro/nano-scale optoelectronic devices.
- Understanding strain effects is crucial for advanced material applications.
More Related Videos
Related Concept Videos
01:27Measurements of Strain
1.9K
Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain...
1.9K
01:15Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity
317
Deformation occurs in axial and transverse directions when an axial load is applied to a slender bar. This deformation impacts the cubic element within the bar, transforming it into either a rectangular parallelepiped or a rhombus, contingent on its orientation. This transformation process induces shearing strain. Axial loading elicits both shearing and normal strains. Applying an axial load instigates equal normal and shearing stresses on elements oriented at a 45° angle to the load axis.
317
01:15Strain and Elastic Modulus
4.0K
The quantity that describes the deformation of a body under stress is known as strain. Strain is given as a fractional change in either length, volume, or geometry under tensile, volume (also known as bulk), or shear stress, respectively, and is a dimensionless quantity. The strain experienced by a body under tensile or compressive stress is called tensile or compressive strain, respectively. In contrast, the strain experienced under bulk stress and shear stress is known as volume and shear...
4.0K
01:20Elastic Strain Energy for Shearing Stresses
264
As discussed in previous lessons, strain energy in a material is the energy stored when it is elastically deformed, a concept crucial in materials science and mechanical engineering. This energy results from the internal work done against the cohesive forces within the material. When a material undergoes shearing stress and corresponding shearing strain, the strain energy density, which is the energy stored per unit volume, is calculated. Within the elastic limit, where the stress is...
264
01:22MOSFET: Enhancement Mode
448
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
448
01:18Mohr's Circle for Plane Strain
639
Mohr's circle is a crucial graphical method used to analyze plane strain by plotting strain on a set of cartesian coordinates, where the abscissa is normal strain ∈ and the ordinate is shear strain γ. Similarly to Mohr’s circle for plane stress, two points X and Y are plotted. Their coordinates are (∈x, -γXY) and (∈Y, γXY), respectively.
Mohr's circle visually represents the strain states under various conditions, which is essential for...
Mohr's circle visually represents the strain states under various conditions, which is essential for...
639