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Low-power multilevel resistive switching inβ-Ga2O3based RRAM devices
Ravi Teja Velpula1, Barsha Jain1, Hieu Pham Trung Nguyen1
1Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America.
Nanotechnology
|November 18, 2022
Summary
This study demonstrates multilevel switching in Gallium Oxide (Ga2O3) resistive random-access memory (RRAM) devices. These low-power RRAM devices show potential for high-density data storage applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Resistive random-access memory (RRAM) offers a promising alternative to conventional memory technologies.
- Low-power operation and high data density are critical for next-generation storage solutions.
- Gallium Oxide (Ga2O3) is an emerging material with potential for advanced electronic devices.
Purpose of the Study:
- To investigate multilevel resistive switching characteristics in Ti/TiN/Ga2O3/Ti/Pt RRAM devices.
- To demonstrate multi-bit storage capability at low compliance currents.
- To assess the potential for low-power and high-density data storage applications.
Main Methods:
- Fabrication of Ti/TiN/Ga2O3/Ti/Pt RRAM devices.
- Systematic study of multilevel switching behavior.
- Experimental demonstration of multi-bit storage at compliance currents of 10μA, 20μA, and 50μA.
Main Results:
- The RRAM device exhibited an excellent non-overlapping window between set and reset voltages (∼1.1 V).
- A maximum off/on resistance ratio (Roff/Ron) of approximately 10^3 was achieved.
- Experimental demonstration of multi-bit storage capability at low compliance currents (10μA, 20μA, 50μA).
Conclusions:
- Multilevel switching at low-power is achievable in Ga2O3-based RRAM devices.
- The demonstrated multi-bit storage capability at low compliance currents is a significant advancement.
- These findings pave the way for low-power, high-density data storage solutions using Ga2O3 RRAM.
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